STB4NK60Z-1

Introduction

The STB4NK60Z-1 is a power MOSFET belonging to the category of semiconductor devices. This device is commonly used in various electronic applications due to its unique characteristics and performance. In this entry, we will provide an overview of the STB4NK60Z-1, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Semiconductor Device
• Use: Power MOSFET for electronic applications
• Characteristics: High voltage capability, low gate charge, fast switching speed
• Package: TO-220, D²PAK, I²PAK, TO-220FP
• Essence: Efficient power management
• Packaging/Quantity: Available in reels or tubes, quantity varies based on packaging type

Specifications

• Voltage Rating: 600V
• Current Rating: 4A
• On-State Resistance (RDS(on)): 1.35Ω
• Gate-Source Voltage (VGS): ±20V
• Operating Temperature Range: -55°C to 150°C
• Storage Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The STB4NK60Z-1 follows the standard pin configuration for power MOSFETs, with the following pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low input capacitance for high-speed switching
• Enhanced avalanche ruggedness for reliable operation
• Low gate charge for reduced switching losses
• Integrated fast body diode for efficient freewheeling

Advantages and Disadvantages

Advantages

• High voltage capability suitable for diverse applications
• Fast switching speed for improved efficiency
• Low gate charge minimizes power losses
• Enhanced avalanche ruggedness ensures reliability

Disadvantages

• Higher on-state resistance compared to some alternative models
• Limited availability in certain package types

Working Principles

The STB4NK60Z-1 operates based on the principles of field-effect transistors, utilizing the control of voltage at the gate terminal to regulate the flow of current between the drain and source terminals. When a sufficient gate-source voltage is applied, the device enters the conducting state, allowing current to flow through.

Detailed Application Field Plans

The STB4NK60Z-1 finds extensive use in various applications, including but not limited to: - Switching power supplies - Motor control - Lighting systems - Audio amplifiers - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the STB4NK60Z-1 include: - STP4NK60Z (similar specifications, different package) - STB5NK60Z-1 (higher current rating, similar voltage rating) - STB4NK60ZT4 (enhanced thermal performance)

In conclusion, the STB4NK60Z-1 power MOSFET offers a balance of high voltage capability, fast switching speed, and low gate charge, making it suitable for a wide range of electronic applications. Its functional features, advantages, and application field plans demonstrate its versatility and reliability in various circuits and systems.

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