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STB30NM50N
Product Overview
Category
The STB30NM50N belongs to the category of power MOSFETs.
Use
It is commonly used in power supply applications, motor control, and other high-power switching applications.
Characteristics
- Low on-resistance
- High switching speed
- Low gate charge
- High avalanche ruggedness
Package
The STB30NM50N is typically available in a TO-220 package.
Essence
The essence of the STB30NM50N lies in its ability to efficiently handle high power and high voltage applications.
Packaging/Quantity
It is usually packaged in reels or tubes and is available in varying quantities depending on the supplier.
Specifications
- Drain-Source Voltage (Vdss): 500V
- Continuous Drain Current (Id): 30A
- On-Resistance (Rds(on)max): 0.08Ω
- Power Dissipation (Pd): 190W
- Gate-Source Voltage (Vgs): ±20V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The STB30NM50N typically has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)
Functional Features
- Fast switching speed
- Low gate drive power
- Enhanced avalanche capability
- Low input capacitance
Advantages and Disadvantages
Advantages
- High power handling capability
- Low on-resistance
- Suitable for high-frequency applications
Disadvantages
- Higher cost compared to standard MOSFETs
- Requires careful handling due to sensitivity to static electricity
Working Principles
The STB30NM50N operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The STB30NM50N is widely used in the following applications: - Switched-mode power supplies - Motor drives - Inverters - Welding equipment - Uninterruptible power supplies (UPS)
Detailed and Complete Alternative Models
Some alternative models to the STB30NM50N include: - IRF540N - FQP30N06L - IRLB8748
In conclusion, the STB30NM50N is a high-performance power MOSFET suitable for demanding applications requiring high power handling and efficient switching characteristics.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací STB30NM50N v technických řešeních
What is the maximum drain current of STB30NM50N?
- The maximum drain current of STB30NM50N is 30A.
What is the maximum drain-source voltage rating of STB30NM50N?
- The maximum drain-source voltage rating of STB30NM50N is 500V.
What is the on-resistance of STB30NM50N?
- The on-resistance of STB30NM50N is typically 0.08 ohms.
Can STB30NM50N be used in high-power applications?
- Yes, STB30NM50N is suitable for high-power applications due to its high drain current and voltage ratings.
What are the typical applications of STB30NM50N?
- STB30NM50N is commonly used in power supplies, motor control, lighting, and other high-power switching applications.
Does STB30NM50N require a heat sink for operation?
- Depending on the application and power dissipation, a heat sink may be required for optimal performance of STB30NM50N.
Is STB30NM50N suitable for use in automotive electronics?
- Yes, STB30NM50N is designed to meet the requirements for automotive applications, such as in electric vehicles and charging systems.
What is the thermal resistance of STB30NM50N?
- The thermal resistance of STB30NM50N is typically low, allowing for efficient heat dissipation.
Can STB30NM50N be used in parallel to increase current handling capability?
- Yes, STB30NM50N can be used in parallel to increase the overall current handling capability in a circuit.
Are there any recommended driver ICs or gate drivers for STB30NM50N?
- Various MOSFET driver ICs are compatible with STB30NM50N, and the choice depends on the specific application requirements and operating conditions.