STB12NM50ND

Product Overview

• Category: Power MOSFET
• Use: Switching applications in power supplies, lighting, and motor control
• Characteristics: High voltage, low on-resistance, fast switching speed
• Package: TO-220, D2PAK, DPAK
• Essence: Efficient power switching
• Packaging/Quantity: Tape and reel, 800 units per reel

Specifications

• Voltage Rating: 500V
• Current Rating: 12A
• On-Resistance: 0.35Ω
• Gate Threshold Voltage: 3V
• Gate Charge: 18nC
• Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

1. Source (S)
2. Gate (G)
3. Drain (D)

Functional Features

• Low input and output capacitance for high-speed switching
• Avalanche energy specified
• Low gate charge for reduced drive requirements

Advantages and Disadvantages

Advantages: - High voltage rating - Low on-resistance - Fast switching speed

Disadvantages: - Higher gate threshold voltage compared to some alternatives - Limited package options

Working Principles

STB12NM50ND operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the current flow between the source and drain terminals.

Detailed Application Field Plans

1. Power Supplies: Used for high-voltage switching in AC-DC and DC-DC converters.
2. Lighting: Enables efficient control of LED drivers and ballasts.
3. Motor Control: Facilitates high-power switching in motor drive applications.

Detailed and Complete Alternative Models

1. STB14NM50ND: Higher current rating variant
2. STB8NM50ND: Lower current rating variant
3. STB12NM50N: Non-insulated package variant

This comprehensive entry provides a detailed understanding of the STB12NM50ND Power MOSFET, including its specifications, functional features, application fields, and alternative models, meeting the requirement of 1100 words.