ON Semiconductor
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RFD12N06RLE
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RFD12N06RLE

Introduction

The RFD12N06RLE is a power MOSFET belonging to the category of electronic components used for switching and amplifying electronic signals. This device offers unique characteristics and features that make it suitable for a wide range of applications.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Switching and amplifying electronic signals
  • Characteristics: High voltage capability, low on-resistance, fast switching speed
  • Package: TO-252 (DPAK)
  • Essence: Efficient power management
  • Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

  • Voltage Rating: 60V
  • Current Rating: 12A
  • On-Resistance: 0.12Ω
  • Gate Charge: 18nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The RFD12N06RLE follows the standard pin configuration for a TO-252 package: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High Voltage Capability: Suitable for applications requiring high voltage handling.
  • Low On-Resistance: Enables efficient power transfer with minimal losses.
  • Fast Switching Speed: Facilitates rapid switching between on and off states.

Advantages and Disadvantages

Advantages

  • Efficient power management
  • High voltage capability
  • Low on-resistance

Disadvantages

  • Sensitive to static electricity
  • Limited current handling compared to higher-rated devices

Working Principles

The RFD12N06RLE operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a sufficient voltage is applied to the gate terminal, the device switches on, allowing current to flow from the drain to the source.

Detailed Application Field Plans

The RFD12N06RLE finds application in various fields including: - Switching power supplies - Motor control - LED lighting - Audio amplifiers - Battery management systems

Detailed and Complete Alternative Models

  • IRF540N
  • FQP30N06L
  • STP16NF06FP
  • IPP60R190E6

In conclusion, the RFD12N06RLE power MOSFET offers a balance of high voltage capability, low on-resistance, and fast switching speed, making it suitable for diverse applications in power electronics and beyond.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací RFD12N06RLE v technických řešeních

  1. What is the maximum drain-source voltage of RFD12N06RLE?

    • The maximum drain-source voltage of RFD12N06RLE is 60V.

  2. What is the continuous drain current rating of RFD12N06RLE?

    • The continuous drain current rating of RFD12N06RLE is 12A.

  3. What is the on-resistance of RFD12N06RLE?

    • The on-resistance of RFD12N06RLE is typically 0.09 ohms.

  4. Can RFD12N06RLE be used for switching applications?

    • Yes, RFD12N06RLE is suitable for switching applications due to its low on-resistance and high current rating.

  5. What is the gate threshold voltage of RFD12N06RLE?

    • The gate threshold voltage of RFD12N06RLE typically ranges from 1 to 2.5V.

  6. Is RFD12N06RLE suitable for automotive applications?

    • Yes, RFD12N06RLE is designed for automotive applications and can be used in various automotive systems.

  7. Does RFD12N06RLE require a heat sink for operation?

    • Depending on the application and power dissipation, a heat sink may be required for optimal performance of RFD12N06RLE.

  8. What is the operating temperature range of RFD12N06RLE?

    • RFD12N06RLE has an operating temperature range of -55°C to 150°C.

  9. Can RFD12N06RLE be used in conjunction with a microcontroller?

    • Yes, RFD12N06RLE can be controlled by a microcontroller through appropriate drive circuitry.

  10. Is RFD12N06RLE RoHS compliant?

    • Yes, RFD12N06RLE is RoHS compliant, making it suitable for use in environmentally sensitive applications.