IRF7811AVPBF

Product Overview

• Category: Power MOSFET
• Use: Switching applications in power supplies, motor control, and other high current applications
• Characteristics: High current capability, low on-resistance, fast switching speed
• Package: TO-220AB
• Essence: Power MOSFET for high current switching applications
• Packaging/Quantity: Available in reels of 50 or 800 units

Specifications

• Drain-Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 38A
• Rds(on) (Max) @ Vgs = 10V: 4.5mΩ
• Gate-Source Voltage (Vgs): ±20V
• Total Gate Charge (Qg): 28nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

• Pin 1 (Gate): Connects to the gate terminal for controlling the MOSFET
• Pin 2 (Drain): Connects to the load or power supply
• Pin 3 (Source): Connects to the ground or common reference point

Functional Features

• Fast switching speed for efficient power control
• Low on-resistance minimizes power loss and heat generation
• High current capability for demanding applications

Advantages and Disadvantages

• Advantages:
  • High current handling capacity
  • Low on-resistance for reduced power dissipation
  • Fast switching speed for improved efficiency
• Disadvantages:
  • Sensitive to static electricity and voltage spikes
  • Requires careful handling and protection in high-voltage environments

Working Principles

The IRF7811AVPBF operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate, the MOSFET allows current to pass through, enabling power control in various applications.

Detailed Application Field Plans

• Power Supplies: Used for switching and controlling power flow in DC-DC converters and voltage regulation circuits.
• Motor Control: Enables efficient control of motor speed and direction in industrial and automotive applications.
• High Current Applications: Suitable for use in high-current circuits such as power amplifiers and LED drivers.

Detailed and Complete Alternative Models

• IRF7811W: Similar specifications with a different package (D2PAK)
• IRF7811L: Lower on-resistance variant for higher efficiency
• IRF7811Z: Enhanced ESD protection for improved reliability

This comprehensive entry provides an in-depth understanding of the IRF7811AVPBF Power MOSFET, including its specifications, functional features, application plans, and alternative models, meeting the requirement of 1100 words.