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IRF6604TR1
Product Overview
Category
The IRF6604TR1 belongs to the category of power MOSFETs.
Use
It is commonly used as a switching device in various electronic circuits and applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The IRF6604TR1 is typically available in a D2PAK package.
Essence
This MOSFET is essential for controlling high-power loads in electronic systems.
Packaging/Quantity
It is usually supplied in reels with a standard quantity per reel.
Specifications
- Drain-Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 160A
- RDS(ON) (Max) @ VGS = 10V: 3.5mΩ
- Gate-Source Voltage (Vgs): ±20V
- Total Gate Charge (Qg): 110nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IRF6604TR1 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- High voltage capability allows it to handle large loads.
- Low on-resistance minimizes power loss and heat generation.
- Fast switching speed enables efficient control of the load.
Advantages
- Suitable for high-power applications
- Low conduction losses
- Fast switching characteristics
Disadvantages
- Higher gate capacitance compared to some alternative models
- May require additional circuitry for driving the gate at higher frequencies
Working Principles
The IRF6604TR1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IRF6604TR1 is widely used in: - Power supplies - Motor control - Inverters - DC-DC converters - Automotive applications
Detailed and Complete Alternative Models
Some alternative models to the IRF6604TR1 include: - IRF6604PbF - IRF6604GPbF - IRF6604TRPbF - IRF6604GTRPbF
In conclusion, the IRF6604TR1 is a high-performance power MOSFET suitable for a wide range of high-power applications, offering low on-resistance and fast switching characteristics. Its use in power supplies, motor control, and other applications makes it a versatile component in the electronics industry.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IRF6604TR1 v technických řešeních
What is the maximum drain-source voltage of IRF6604TR1?
- The maximum drain-source voltage of IRF6604TR1 is 30V.
What is the continuous drain current of IRF6604TR1?
- The continuous drain current of IRF6604TR1 is 140A.
What is the on-state resistance of IRF6604TR1?
- The on-state resistance of IRF6604TR1 is typically 1.8mΩ.
What is the gate threshold voltage of IRF6604TR1?
- The gate threshold voltage of IRF6604TR1 is typically 2V.
What are the typical applications of IRF6604TR1?
- IRF6604TR1 is commonly used in high-current, high-frequency applications such as power supplies, motor control, and DC-DC converters.
What is the operating temperature range of IRF6604TR1?
- The operating temperature range of IRF6604TR1 is -55°C to 175°C.
Does IRF6604TR1 require a heat sink for operation?
- Depending on the application and power dissipation, a heat sink may be required for optimal performance of IRF6604TR1.
Is IRF6604TR1 suitable for automotive applications?
- Yes, IRF6604TR1 is suitable for automotive applications due to its high current capability and robustness.
Can IRF6604TR1 be used in parallel to increase current handling capacity?
- Yes, IRF6604TR1 can be used in parallel to increase current handling capacity in certain applications.
What are the key features of IRF6604TR1 that make it suitable for technical solutions?
- The key features of IRF6604TR1 include low on-state resistance, high current capability, and suitability for high-frequency switching applications.