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IRF4104LPBF

IRF4104LPBF

Product Overview

Category

The IRF4104LPBF belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification purposes.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate drive power

Package

The IRF4104LPBF is typically available in a TO-220AB package.

Essence

This MOSFET is essential for controlling high-power loads in various electronic applications.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on supplier and customer requirements.

Specifications

  • Drain-Source Voltage (VDS): 40V
  • Continuous Drain Current (ID): 75A
  • On-Resistance (RDS(on)): 4.5mΩ
  • Power Dissipation (PD): 200W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IRF4104LPBF has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High current-carrying capability
  • Low conduction losses
  • Fast switching characteristics
  • Compatibility with standard logic levels

Advantages

  • Efficient power handling
  • Reduced heat dissipation
  • Suitable for high-frequency applications
  • Enhanced system reliability

Disadvantages

  • Sensitivity to electrostatic discharge (ESD)
  • Potential for thermal runaway if not properly managed

Working Principles

The IRF4104LPBF operates based on the principle of field-effect control, where the voltage applied to the gate terminal modulates the conductivity between the drain and source terminals, allowing for efficient power regulation and switching.

Detailed Application Field Plans

The IRF4104LPBF finds extensive use in the following applications: - Switched-mode power supplies - Motor control systems - Class-D audio amplifiers - DC-DC converters - Electronic load switches

Detailed and Complete Alternative Models

Some alternative models to the IRF4104LPBF include: - IRF4905PBF - IRF3205PBF - IRF540N - IRFZ44N - IRF9540N

In conclusion, the IRF4104LPBF power MOSFET offers high-performance characteristics suitable for a wide range of electronic applications, providing efficient power handling and fast switching capabilities.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IRF4104LPBF v technických řešeních

  1. What is the IRF4104LPBF?

    • The IRF4104LPBF is a power MOSFET transistor designed for high-speed switching applications in various technical solutions.
  2. What is the maximum drain-source voltage of the IRF4104LPBF?

    • The maximum drain-source voltage of the IRF4104LPBF is 40 volts.
  3. What is the continuous drain current rating of the IRF4104LPBF?

    • The continuous drain current rating of the IRF4104LPBF is 75 amperes.
  4. What is the on-state resistance (RDS(on)) of the IRF4104LPBF?

    • The on-state resistance of the IRF4104LPBF is typically around 4.5 milliohms.
  5. What are the typical applications of the IRF4104LPBF?

    • The IRF4104LPBF is commonly used in power supplies, motor control, and other high-current switching applications.
  6. What is the gate-source voltage range for proper operation of the IRF4104LPBF?

    • The gate-source voltage range for proper operation of the IRF4104LPBF is typically between -20 volts and +20 volts.
  7. Does the IRF4104LPBF require a heat sink for certain applications?

    • Yes, for high-power applications or when operating at high currents, a heat sink may be required to dissipate heat effectively.
  8. Is the IRF4104LPBF suitable for automotive applications?

    • Yes, the IRF4104LPBF is designed to meet the requirements for automotive applications, including AEC-Q101 qualification.
  9. What are the thermal characteristics of the IRF4104LPBF?

    • The IRF4104LPBF has a low thermal resistance and is capable of efficient heat dissipation under normal operating conditions.
  10. Are there any specific precautions to consider when using the IRF4104LPBF in a circuit?

    • It's important to ensure proper gate drive voltage, avoid exceeding the maximum ratings, and implement appropriate protection circuits to prevent damage from overcurrent or overvoltage conditions.