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IRF1310NPBF

IRF1310NPBF

Product Overview

Category

The IRF1310NPBF belongs to the category of power MOSFETs.

Use

It is commonly used in applications requiring high power switching and amplification.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • High reliability

Package

The IRF1310NPBF is typically available in a TO-220AB package.

Essence

This MOSFET is essential for controlling high-power circuits efficiently.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on supplier specifications.

Specifications

  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 42A
  • On-Resistance (RDS(on)): 14mΩ
  • Power Dissipation (PD): 200W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IRF1310NPBF has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows it to be used in various power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid control of power flow.

Advantages

  • Suitable for high-power applications
  • Low on-resistance reduces power dissipation
  • Reliable performance under high voltage conditions

Disadvantages

  • May require additional circuitry for driving the gate due to its high gate-source voltage rating
  • Larger physical size compared to some other MOSFETs

Working Principles

The IRF1310NPBF operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IRF1310NPBF is widely used in: - Power supplies - Motor control - Inverters - Switching regulators - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the IRF1310NPBF include: - IRF1405PBF - IRF3205PBF - IRF540NPBF - IRF840PBF

In conclusion, the IRF1310NPBF is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of high-power applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IRF1310NPBF v technických řešeních

  1. What is the maximum drain-source voltage of IRF1310NPBF?

    • The maximum drain-source voltage of IRF1310NPBF is 100V.
  2. What is the continuous drain current rating of IRF1310NPBF?

    • The continuous drain current rating of IRF1310NPBF is 42A.
  3. What is the on-state resistance (RDS(on)) of IRF1310NPBF?

    • The on-state resistance (RDS(on)) of IRF1310NPBF is typically 14mΩ at VGS = 10V.
  4. What is the gate-source voltage (VGS) for IRF1310NPBF?

    • The gate-source voltage (VGS) for IRF1310NPBF is ±20V.
  5. Is IRF1310NPBF suitable for high-frequency switching applications?

    • Yes, IRF1310NPBF is suitable for high-frequency switching applications due to its low RDS(on) and fast switching characteristics.
  6. Can IRF1310NPBF be used in automotive applications?

    • Yes, IRF1310NPBF is commonly used in automotive applications such as motor control and power distribution.
  7. What are the thermal characteristics of IRF1310NPBF?

    • The thermal resistance from junction to case (RθJC) of IRF1310NPBF is 1.0°C/W.
  8. Does IRF1310NPBF have built-in ESD protection?

    • No, IRF1310NPBF does not have built-in ESD protection and external ESD precautions should be taken during handling and assembly.
  9. What are the typical applications of IRF1310NPBF?

    • Typical applications of IRF1310NPBF include motor drives, DC-DC converters, power supplies, and load switching.
  10. What are the recommended operating conditions for IRF1310NPBF?

    • The recommended operating temperature range for IRF1310NPBF is -55°C to 175°C, and it should be operated within the specified voltage and current limits for optimal performance and reliability.