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IPP111N15N3GXKSA1
Product Overview
The IPP111N15N3GXKSA1 belongs to the category of power MOSFETs and is designed for use in various electronic applications. This MOSFET offers high performance characteristics, comes in a specific package, and has unique features that make it suitable for a range of applications.
Basic Information
- Category: Power MOSFET
- Use: Electronic applications requiring power switching
- Characteristics: High performance, low on-state resistance, fast switching speed
- Package: TO-220 Fullpak
- Essence: Efficient power management
- Packaging/Quantity: Available in reels or tubes, quantity varies based on supplier
Specifications
- Voltage Rating: 150V
- Current Rating: 110A
- On-State Resistance (RDS(on)): 11 mΩ
- Gate Charge (Qg): 70nC
- Operating Temperature Range: -55°C to 175°C
- Package Type: TO-220 Fullpak
Detailed Pin Configuration
The IPP111N15N3GXKSA1 follows the standard pin configuration for a TO-220 Fullpak package: 1. Source (S) 2. Gate (G) 3. Drain (D)
Functional Features
- Low on-state resistance for minimal power dissipation
- Fast switching speed for efficient power management
- High current handling capability for demanding applications
Advantages and Disadvantages
Advantages
- High performance characteristics
- Suitable for high-power applications
- Efficient power management
Disadvantages
- May require additional heat sinking for certain applications
- Higher cost compared to standard MOSFETs
Working Principles
The IPP111N15N3GXKSA1 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the source and drain terminals. When a sufficient gate voltage is applied, the MOSFET allows current to flow through, enabling power switching in electronic circuits.
Detailed Application Field Plans
The IPP111N15N3GXKSA1 is well-suited for a wide range of applications, including but not limited to: - Switch mode power supplies - Motor control systems - Inverter and converter circuits - Automotive electronics - Industrial power systems
Detailed and Complete Alternative Models
For users seeking alternative models with similar specifications and performance, the following options can be considered: - IPP110N15N3G - IPP112N15N3G - IPP113N15N3G
In conclusion, the IPP111N15N3GXKSA1 power MOSFET offers high-performance characteristics, making it suitable for a variety of electronic applications requiring efficient power management and high current handling capabilities.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IPP111N15N3GXKSA1 v technických řešeních
What is the maximum drain current of IPP111N15N3GXKSA1?
- The maximum drain current of IPP111N15N3GXKSA1 is 110A.
What is the gate-source voltage for IPP111N15N3GXKSA1?
- The gate-source voltage for IPP111N15N3GXKSA1 is ±20V.
What is the typical on-resistance of IPP111N15N3GXKSA1?
- The typical on-resistance of IPP111N15N3GXKSA1 is 4.5mΩ.
What is the operating temperature range for IPP111N15N3GXKSA1?
- The operating temperature range for IPP111N15N3GXKSA1 is -55°C to 175°C.
Does IPP111N15N3GXKSA1 have a low input capacitance?
- Yes, IPP111N15N3GXKSA1 has a low input capacitance, which makes it suitable for high-frequency applications.
Is IPP111N15N3GXKSA1 suitable for automotive applications?
- Yes, IPP111N15N3GXKSA1 is designed for automotive applications and meets AEC-Q101 standards.
What is the package type of IPP111N15N3GXKSA1?
- IPP111N15N3GXKSA1 comes in a TO-220 fullpak package.
Can IPP111N15N3GXKSA1 be used in power supply designs?
- Yes, IPP111N15N3GXKSA1 is commonly used in power supply designs due to its high current capability and low on-resistance.
Does IPP111N15N3GXKSA1 have built-in ESD protection?
- Yes, IPP111N15N3GXKSA1 features built-in ESD protection, enhancing its reliability in various applications.
Is IPP111N15N3GXKSA1 RoHS compliant?
- Yes, IPP111N15N3GXKSA1 is RoHS compliant, making it suitable for environmentally conscious designs.