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IPB47N10S33ATMA1
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IPB47N10S33ATMA1

Product Overview

Category

The IPB47N10S33ATMA1 belongs to the category of power MOSFETs.

Use

It is used as a high-performance switching device in various electronic circuits and applications.

Characteristics

  • High voltage capability
  • Low input capacitance
  • Fast switching speed
  • Low on-resistance

Package

The IPB47N10S33ATMA1 is typically available in a TO-263 package.

Essence

This MOSFET is essential for efficient power management and control in electronic systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 47A
  • RDS(ON) (Max) @ VGS = 10V: 33mΩ
  • Input Capacitance (Ciss): 3700pF
  • Power Dissipation (PD): 200W

Detailed Pin Configuration

The IPB47N10S33ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low input capacitance enables fast switching speeds.
  • Low on-resistance minimizes power losses and improves efficiency.

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Higher input capacitance compared to some alternative models
  • May require additional circuitry for optimal performance in certain applications

Working Principles

The IPB47N10S33ATMA1 operates based on the principles of field-effect transistors, utilizing its gate, drain, and source terminals to control the flow of current through the device.

Detailed Application Field Plans

The IPB47N10S33ATMA1 is commonly used in the following applications: - Switching power supplies - Motor control - Inverters - LED lighting - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the IPB47N10S33ATMA1 include: - IPB47N10S3L-16 - IPB47N10S3-16 - IPB47N10S3-25

In conclusion, the IPB47N10S33ATMA1 is a high-performance power MOSFET with characteristics that make it suitable for a wide range of power management and control applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IPB47N10S33ATMA1 v technických řešeních

  1. What is the maximum drain-source voltage of IPB47N10S33ATMA1?

    • The maximum drain-source voltage of IPB47N10S33ATMA1 is 100V.

  2. What is the continuous drain current rating of IPB47N10S33ATMA1?

    • The continuous drain current rating of IPB47N10S33ATMA1 is 47A.

  3. What is the on-resistance of IPB47N10S33ATMA1?

    • The on-resistance of IPB47N10S33ATMA1 is typically 10mΩ.

  4. Can IPB47N10S33ATMA1 be used in automotive applications?

    • Yes, IPB47N10S33ATMA1 is designed for use in automotive applications.

  5. What is the operating temperature range of IPB47N10S33ATMA1?

    • The operating temperature range of IPB47N10S33ATMA1 is -55°C to 175°C.

  6. Does IPB47N10S33ATMA1 have built-in protection features?

    • Yes, IPB47N10S33ATMA1 has built-in overcurrent protection and thermal shutdown features.

  7. What type of package does IPB47N10S33ATMA1 come in?

    • IPB47N10S33ATMA1 comes in a TO-263-7 package.

  8. Is IPB47N10S33ATMA1 suitable for high-frequency switching applications?

    • Yes, IPB47N10S33ATMA1 is suitable for high-frequency switching due to its low on-resistance.

  9. What gate threshold voltage does IPB47N10S33ATMA1 require?

    • IPB47N10S33ATMA1 typically requires a gate threshold voltage of 2.5V.

  10. Can IPB47N10S33ATMA1 be used in power management solutions?

    • Yes, IPB47N10S33ATMA1 is commonly used in power management solutions due to its high current handling capability and low on-resistance.