IPB180N06S4H1ATMA2

Introduction

The IPB180N06S4H1ATMA2 is a power MOSFET belonging to the category of electronic components. This entry provides an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the IPB180N06S4H1ATMA2.

Basic Information Overview

• Category: Electronic Components
• Use: Power MOSFET for various electronic applications
• Characteristics: High power handling capacity, low on-state resistance, fast switching speed
• Package: TO263-3 (D2PAK)
• Essence: Power management in electronic circuits
• Packaging/Quantity: Typically packaged in reels of 800 units

Specifications

• Voltage Rating: 60V
• Current Rating: 180A
• On-State Resistance: 4mΩ
• Gate Threshold Voltage: 2V
• Maximum Power Dissipation: 300W
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB180N06S4H1ATMA2 has a standard TO263-3 (D2PAK) package with three pins: 1. Pin 1 (Gate): Input for controlling the switching operation 2. Pin 2 (Drain): Connection for the load 3. Pin 3 (Source): Ground reference for the MOSFET

Functional Features

• High current-carrying capability
• Low on-state resistance for efficient power transfer
• Fast switching speed for improved performance
• Robust construction for reliability in demanding applications

Advantages and Disadvantages

Advantages

• High power handling capacity
• Low on-state resistance reduces power losses
• Fast switching speed enhances efficiency
• Robust construction ensures reliability

Disadvantages

• Higher cost compared to lower-rated MOSFETs
• Requires careful consideration of heat dissipation in high-power applications

Working Principles

The IPB180N06S4H1ATMA2 operates based on the principle of field-effect transistors. When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals. By modulating this electric field, the MOSFET can efficiently control the power flow in electronic circuits.

Detailed Application Field Plans

The IPB180N06S4H1ATMA2 finds extensive use in various applications, including: - Switch-mode power supplies - Motor control systems - Inverters and converters - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the IPB180N06S4H1ATMA2 include: - IRF1405PBF - FDP8878 - STP80NF03L

In conclusion, the IPB180N06S4H1ATMA2 is a high-performance power MOSFET with excellent characteristics suitable for a wide range of electronic applications.

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