Infineon Technologies
Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
IPB025N10N3GE8187ATMA1
Zobrazit detail DataSheets

IPB025N10N3GE8187ATMA1

Product Category: Power MOSFET

Basic Information Overview: - Category: Semiconductor - Use: Power switching applications - Characteristics: High efficiency, low on-resistance, fast switching speed - Package: TO263-3 - Essence: Efficient power management - Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications: - Voltage Rating: 100V - Current Rating: 80A - On-Resistance: 2.5mΩ - Gate Charge: 25nC - Operating Temperature: -55°C to 175°C

Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features: - Low on-resistance for minimal power dissipation - Fast switching speed for improved efficiency - High current handling capability for power applications

Advantages and Disadvantages: - Advantages: - High efficiency - Low on-resistance - Fast switching speed - Disadvantages: - Sensitive to static electricity - Requires careful handling during assembly

Working Principles: The IPB025N10N3GE8187ATMA1 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.

Detailed Application Field Plans: - Power supplies - Motor control - DC-DC converters - Inverters

Detailed and Complete Alternative Models: 1. IPB025N10N3 G 2. IPB025N10N3G

This completes the entry for IPB025N10N3GE8187ATMA1 in the English editing encyclopedia format.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IPB025N10N3GE8187ATMA1 v technických řešeních

  1. What is the maximum drain-source voltage of IPB025N10N3GE8187ATMA1?

    • The maximum drain-source voltage of IPB025N10N3GE8187ATMA1 is 100V.

  2. What is the continuous drain current rating of IPB025N10N3GE8187ATMA1?

    • The continuous drain current rating of IPB025N10N3GE8187ATMA1 is 25A.

  3. What is the on-state resistance (RDS(on)) of IPB025N10N3GE8187ATMA1?

    • The on-state resistance (RDS(on)) of IPB025N10N3GE8187ATMA1 is typically 0.025 ohms.

  4. Can IPB025N10N3GE8187ATMA1 be used in automotive applications?

    • Yes, IPB025N10N3GE8187ATMA1 is designed for use in automotive applications.

  5. What is the operating temperature range of IPB025N10N3GE8187ATMA1?

    • The operating temperature range of IPB025N10N3GE8187ATMA1 is -55°C to 175°C.

  6. Does IPB025N10N3GE8187ATMA1 have built-in ESD protection?

    • Yes, IPB025N10N3GE8187ATMA1 features built-in ESD protection.

  7. Is IPB025N10N3GE8187ATMA1 suitable for high-frequency switching applications?

    • Yes, IPB025N10N3GE8187ATMA1 is suitable for high-frequency switching applications.

  8. What package type does IPB025N10N3GE8187ATMA1 come in?

    • IPB025N10N3GE8187ATMA1 is available in a TO-263-7 package.

  9. What gate threshold voltage does IPB025N10N3GE8187ATMA1 require?

    • IPB025N10N3GE8187ATMA1 has a gate threshold voltage typically ranging from 2.5V to 4V.

  10. Are there any application notes or reference designs available for using IPB025N10N3GE8187ATMA1?

    • Yes, application notes and reference designs are available to assist in using IPB025N10N3GE8187ATMA1 in technical solutions.