Toshiba Semiconductor and Storage
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TK4A60DB(STA4,Q,M)
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TK4A60DB(STA4,Q,M)

MOSFET N-CH 600V 3.7A TO-220SIS
Číslo dílu
TK4A60DB(STA4,Q,M)
Výrobce/značka
Toshiba Semiconductor and Storage
Série
π-MOSVII
Stav sekce
Active
Obal
Tube
Technika
MOSFET (Metal Oxide)
Provozní teplota
150°C (TJ)
Typ montáže
Through Hole
Balíček/pouzdro
TO-220-3 Full Pack
Dodavatelský balíček zařízení
TO-220SIS
Ztráta energie (max.)
35W (Tc)
Typ FET
N-Channel
Funkce FET
-
Odvod ke zdroji napětí (Vdss)
600V
Proud - kontinuální vypouštění (Id) @ 25°C
3.7A (Ta)
Aktivní Rds (Max) @ ID, Vgs
2 Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id
4.4V @ 1mA
Cena brány (Qg) (Max) @ Vgs
11nC @ 10V
Vstupní kapacita (Ciss) (Max) @ Vds
540pF @ 25V
Napětí pohonu (Max Active Rds, Min Active Rds)
10V
VGS (max.)
±30V
Žádost o nabídku
Vyplňte prosím všechna požadovaná pole a klikněte na " Předložit ", budeme vás kontaktovat za 12 hodin e-mailem. Pokud máte nějaký problém, zanechte prosím zprávy nebo e-mail [email protected], budeme odpovídat co nejdříve.
Na skladě 43103 PCS
Kontaktní informace
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Klíčová slova TK4A60DB(STA4,Q,M)
TK4A60DB(STA4,Q,M) Elektronické komponenty
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