onsemi (Ansemi)
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NSR02F30MXT5G 30V 200mA 500mV@200mA 200 mA, 30 V, x3DFN 0201 Schottky diode Barrier diode

NSR02F30MXT5G

30V 200mA 500mV@200mA 200 mA, 30 V, x3DFN 0201 Schottky diode Barrier diode
Číslo dílu
NSR02F30MXT5G
Kategorie
diode > Schottky diode
Výrobce/značka
onsemi (Ansemi)
Encapsulation
DFN0603-2
Balení
taping
Počet balíků
10000
Popis
These Schottky diode barrier diodes are optimized for low forward voltage drop and low leakage current, providing the best power dissipation performance in the application. They feature a space-saving x3DFN 0201 encapsulation for applications where space is limited.
Žádost o nabídku
Vyplňte prosím všechna požadovaná pole a klikněte na " Předložit ", budeme vás kontaktovat za 12 hodin e-mailem. Pokud máte nějaký problém, zanechte prosím zprávy nebo e-mail [email protected], budeme odpovídat co nejdříve.
Na skladě 90463 PCS
Kontaktní informace
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Klíčová slova NSR02F30MXT5G
NSR02F30MXT5G Elektronické komponenty
NSR02F30MXT5G Odbyt
NSR02F30MXT5G Dodavatel
NSR02F30MXT5G Distributor
NSR02F30MXT5G Datová tabulka
NSR02F30MXT5G Fotky
NSR02F30MXT5G Cena
NSR02F30MXT5G Nabídka
NSR02F30MXT5G Nejnižší cena
NSR02F30MXT5G Vyhledávání
NSR02F30MXT5G Nákup
NSR02F30MXT5G Chip