onsemi (Ansemi)
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NCV5703BDR2G Half Bridge IGBT Sink 1A, Source 1A IGBT Gate Driver, High Current, Standalone

NCV5703BDR2G

Half Bridge IGBT Sink 1A, Source 1A IGBT Gate Driver, High Current, Standalone
Číslo dílu
NCV5703BDR2G
Kategorie
Power Chip > Gate Driver IC
Výrobce/značka
onsemi (Ansemi)
Encapsulation
SOIC-8
Balení
taping
Počet balíků
2500
Popis
The NCV5703 series is a set of high current, high performance stand-alone IGBT drivers with non-inverting input logic levels for medium to high power applications such as PTC heaters, EV chargers and other automotive power supplies. The device eliminates the need for a large number of external components, providing a cost-effective solution. The device's protection features include an active Miller clamp (NCV5703A), accurate UVLO, DESAT protection, and an open-drain fault output. The driver also features an accurate 5.0 V output (all versions) and separate high and low (VOH and VOL) ​​driver outputs (NCV5703C only) for easy system design. The driver can operate with a wide range of unipolar bias supplies (and the NCV5703B bipolar bias supply). All versions feature 8-pin SOIC encapsulation and are AEC-Q100 qualified.
Žádost o nabídku
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Na skladě 50263 PCS
Kontaktní informace
Klíčová slova NCV5703BDR2G
NCV5703BDR2G Elektronické komponenty
NCV5703BDR2G Odbyt
NCV5703BDR2G Dodavatel
NCV5703BDR2G Distributor
NCV5703BDR2G Datová tabulka
NCV5703BDR2G Fotky
NCV5703BDR2G Cena
NCV5703BDR2G Nabídka
NCV5703BDR2G Nejnižší cena
NCV5703BDR2G Vyhledávání
NCV5703BDR2G Nákup
NCV5703BDR2G Chip