onsemi (Ansemi)
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NCV57000DWR2G Isolated high current and high efficiency IGBT gate drivers with internal galvanic isolation.

NCV57000DWR2G

Isolated high current and high efficiency IGBT gate drivers with internal galvanic isolation.
Číslo dílu
NCV57000DWR2G
Kategorie
Power Chip > Gate Driver IC
Výrobce/značka
onsemi (Ansemi)
Encapsulation
SOIC-16-300mil
Balení
taping
Počet balíků
1000
Popis
The NCV57000 is a high current single-channel IGBT driver with internal galvanic isolation for high system efficiency and reliability in high power applications. Features include complementary inputs, open-drain FAULT and Ready outputs, active Miller clamp, accurate UVLO, DESAT protection, soft shutdown on DESAT, and separate high and low driver outputs (OUTH and OUTL ). The NCV57000 can accommodate 5V and 3.3V signals on the input side, and a wide bias voltage range on the driver side, including negative voltage capability. The NCV57000 offers > 5 kVrms (UL1577 rated) galvanic isolation and > 1200 Viorm (working voltage). The NCV57000 uses a wide body SOIC-16 encapsulation that guarantees 8 mm creepage distance between input and output, meeting reinforced safety insulation requirements.
Žádost o nabídku
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Na skladě 84093 PCS
Kontaktní informace
Klíčová slova NCV57000DWR2G
NCV57000DWR2G Elektronické komponenty
NCV57000DWR2G Odbyt
NCV57000DWR2G Dodavatel
NCV57000DWR2G Distributor
NCV57000DWR2G Datová tabulka
NCV57000DWR2G Fotky
NCV57000DWR2G Cena
NCV57000DWR2G Nabídka
NCV57000DWR2G Nejnižší cena
NCV57000DWR2G Vyhledávání
NCV57000DWR2G Nákup
NCV57000DWR2G Chip