Koupit onsemi (Ansemi) NCP81075DR2G Low-Side High-Side MOSFETs Sink 4A, Source 4A High-Side and Low-Side Gate Drivers, High Frequency, 180 V, 4A Capable

onsemi (Ansemi)

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NCP81075DR2G

Low-Side High-Side MOSFETs Sink 4A, Source 4A High-Side and Low-Side Gate Drivers, High Frequency, 180 V, 4A Capable

Číslo dílu

NCP81075DR2G

Kategorie

Power Chip > Gate Driver IC

Výrobce/značka

onsemi (Ansemi)

Encapsulation

SOIC-8

Balení

taping

Počet balíků

2500

Popis

The NCP81075 is a high-performance dual-MOSFET (high-side and low-side) gate drive integrated circuit suitable for driving high-speed, high-voltage MOSFETs operating at voltages up to 180 V. The NCP81075 integrates a driver IC and a bootstrap diode with a drive capability up to 4A. High-side and low-side drivers are independently controlled with matched 3.5ns typical propagation delay. This driver is suitable for high voltage buck applications, isolated power supplies, 2-switch and active clamp forward converters. The device can also be used in solar optimizer and solar inverter applications. The part is available in SO8, 8-pin DFN and 10-pin DFN encapsulation and is fully specified from -40C to 140C.

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Na skladě 81153 PCS

Kontaktní informace

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