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NCP51820AMNTWG
Half-Bridge MOSFETs Sink 2A, Source 1A High Performance, 650 V Half-Bridge Gate Driver for GaN Power Switches
Číslo dílu
NCP51820AMNTWG
Kategorie
Power Chip > Gate Driver IC
Výrobce/značka
onsemi (Ansemi)
Encapsulation
QFN-15(4.4x4)
Balení
taping
Počet balíků
4000
Popis
The NCP51820 high-speed gate driver is designed to meet the stringent requirements of driving enhancement-mode (e?mode) and gate-inhibiting transistor (GIT) GaN HEMT power switches in offline, half-power supply topologies. The NCP51820 provides short-circuit and matched propagation delays for high-side drive, and a common-mode voltage range of −3.5 V to +650 V (typical). To fully protect the gates of the GaN power transistors from excessive voltage stress, both driver stages feature dedicated voltage regulators to accurately maintain the gate-source drive signal amplitude. The NCP51820 provides important protection features such as independent undervoltage lockout (UVLO) and IC thermal shutdown.
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