onsemi (Ansemi)
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NCP51810AMNTWG Half-Bridge MOSFETs Sink 2A, Source 1A High Performance, 200 V Half-Bridge Gate Driver for GaN Power Switches

NCP51810AMNTWG

Half-Bridge MOSFETs Sink 2A, Source 1A High Performance, 200 V Half-Bridge Gate Driver for GaN Power Switches
Číslo dílu
NCP51810AMNTWG
Kategorie
Power Chip > Gate Driver IC
Výrobce/značka
onsemi (Ansemi)
Encapsulation
QFN-15(4.4x4)
Balení
taping
Počet balíků
4000
Popis
The NCP51810 high-speed gate driver is designed to meet the stringent requirements of driving enhancement-mode (e?mode) and gate-inhibiting transistor (GIT) GaN HEMT power switches in offline, half-power supply topologies. The NCP51810 provides short-circuit and matched propagation delays for high-side drive, and a common-mode voltage range of −3.5 V to +200 V (typical). To fully protect the gates of the GaN power transistors from excessive voltage stress, both driver stages feature dedicated voltage regulators to accurately maintain the gate-source drive signal amplitude. The NCP51810 provides important protection features such as independent undervoltage lockout (UVLO) and IC thermal shutdown.
Žádost o nabídku
Vyplňte prosím všechna požadovaná pole a klikněte na " Předložit ", budeme vás kontaktovat za 12 hodin e-mailem. Pokud máte nějaký problém, zanechte prosím zprávy nebo e-mail [email protected], budeme odpovídat co nejdříve.
Na skladě 89873 PCS
Kontaktní informace
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Klíčová slova NCP51810AMNTWG
NCP51810AMNTWG Elektronické komponenty
NCP51810AMNTWG Odbyt
NCP51810AMNTWG Dodavatel
NCP51810AMNTWG Distributor
NCP51810AMNTWG Datová tabulka
NCP51810AMNTWG Fotky
NCP51810AMNTWG Cena
NCP51810AMNTWG Nabídka
NCP51810AMNTWG Nejnižší cena
NCP51810AMNTWG Vyhledávání
NCP51810AMNTWG Nákup
NCP51810AMNTWG Chip