onsemi (Ansemi)
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NCP5111DR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA Power MOSFET/IGBT Driver, Single Input, Half Bridge

NCP5111DR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA Power MOSFET/IGBT Driver, Single Input, Half Bridge
Číslo dílu
NCP5111DR2G
Kategorie
Power Chip > Gate Driver IC
Výrobce/značka
onsemi (Ansemi)
Encapsulation
SOIC-8
Balení
taping
Počet balíků
2500
Popis
The NCP5111 is a high voltage power gate driver driver with two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in a half-bridge configuration. It uses a bootstrap technique to ensure proper driving of the high side power switch.
Žádost o nabídku
Vyplňte prosím všechna požadovaná pole a klikněte na " Předložit ", budeme vás kontaktovat za 12 hodin e-mailem. Pokud máte nějaký problém, zanechte prosím zprávy nebo e-mail [email protected], budeme odpovídat co nejdříve.
Na skladě 90532 PCS
Kontaktní informace
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Klíčová slova NCP5111DR2G
NCP5111DR2G Elektronické komponenty
NCP5111DR2G Odbyt
NCP5111DR2G Dodavatel
NCP5111DR2G Distributor
NCP5111DR2G Datová tabulka
NCP5111DR2G Fotky
NCP5111DR2G Cena
NCP5111DR2G Nabídka
NCP5111DR2G Nejnižší cena
NCP5111DR2G Vyhledávání
NCP5111DR2G Nákup
NCP5111DR2G Chip