onsemi (Ansemi)
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NCP5109BMNTWG MOSFET/IGBT driver, high voltage, high and low side, 200 V

NCP5109BMNTWG

MOSFET/IGBT driver, high voltage, high and low side, 200 V
Číslo dílu
NCP5109BMNTWG
Kategorie
Power Chip > Gate Driver IC
Výrobce/značka
onsemi (Ansemi)
Encapsulation
DFN-10(3x3)
Balení
taping
Počet balíků
3000
Popis
The NCP5109 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
Žádost o nabídku
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Na skladě 87578 PCS
Kontaktní informace
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Klíčová slova NCP5109BMNTWG
NCP5109BMNTWG Elektronické komponenty
NCP5109BMNTWG Odbyt
NCP5109BMNTWG Dodavatel
NCP5109BMNTWG Distributor
NCP5109BMNTWG Datová tabulka
NCP5109BMNTWG Fotky
NCP5109BMNTWG Cena
NCP5109BMNTWG Nabídka
NCP5109BMNTWG Nejnižší cena
NCP5109BMNTWG Vyhledávání
NCP5109BMNTWG Nákup
NCP5109BMNTWG Chip