onsemi (Ansemi)
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MBRM1H100T3G 100V 1A 840mV@2A Schottky diodePower rectifier, 1.0 A, 100 V

MBRM1H100T3G

100V 1A 840mV@2A Schottky diodePower rectifier, 1.0 A, 100 V
Číslo dílu
MBRM1H100T3G
Kategorie
diode > Schottky diode
Výrobce/značka
onsemi (Ansemi)
Encapsulation
POWERMITE
Balení
taping
Počet balíků
12000
Popis
The Schottky diode uses the Schottky diode barrier principle, adopts barrier metal and epitaxial structure, and can produce an optimized forward voltage drop-reverse current trade-off. This advanced encapsulation technology can be used to achieve energy-efficient miniature, space-saving devices. Relying on a unique thermal design, Powermite provides the same thermal performance as an SMA in a 50% smaller footprint. Because of its small size, it is ideal for portable and battery-powered products such as cellular phones, cordless phones, chargers, notebook computers, printers, PDAs, and PCMCIA cards. Typical applications are AC-DC and DC-DC converters, reverse battery protection and "OR" operation of multiple supply voltages, and other applications where performance and size are critical.
Žádost o nabídku
Vyplňte prosím všechna požadovaná pole a klikněte na " Předložit ", budeme vás kontaktovat za 12 hodin e-mailem. Pokud máte nějaký problém, zanechte prosím zprávy nebo e-mail [email protected], budeme odpovídat co nejdříve.
Na skladě 66511 PCS
Kontaktní informace
Klíčová slova MBRM1H100T3G
MBRM1H100T3G Elektronické komponenty
MBRM1H100T3G Odbyt
MBRM1H100T3G Dodavatel
MBRM1H100T3G Distributor
MBRM1H100T3G Datová tabulka
MBRM1H100T3G Fotky
MBRM1H100T3G Cena
MBRM1H100T3G Nabídka
MBRM1H100T3G Nejnižší cena
MBRM1H100T3G Vyhledávání
MBRM1H100T3G Nákup
MBRM1H100T3G Chip