TVS fuse board level protection
High Diode (Hyde)
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VRWM=30V, Vc=48.4V, Ipp=4.1A
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FMS (beautiful micro)
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Ihold(A) 1.50 Itrip(A) 3 Vmax(V) 6 max(A) 100 TimeToTripCurrent(A) 8 Pdtyp(W) 0.8 ResistanceRmin(Ω) 0.03
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Infineon (Infineon)
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TI (Texas Instruments)
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HXY MOSFET (Huaxuanyang Electronics)
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Electrostatic discharge (ESD) protection device VRWM: 7V, IPP: 20A, VC: 18V, C: 18pF, 1 channel, bidirectional
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TVS array, 5V, 25A, Cj<10pF
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Ihold(A) 0.35 Itrip(A) 0.75 Vmax(V) 6 max(A) 40 TimeToTripCurrent(A) 8 Pdtyp(W) 0.5 ResistanceRmin(Ω) 0.2
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The NIS/NIV1161 is used to protect high-speed data lines from conditions such as ESD and automotive battery shorts. Ultra-low capacitance and low ESD clamping voltage make this device ideal for protecting voltage-sensitive high-speed data lines, while low RDS(on) FETs limit distortion on signal lines. Flow-through packaging allows for simple PCB layout and the necessary matched trace lengths to maintain consistent impedance between high-speed differential lines for protocols such as USB and HDMI.
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Littelfuse (American Littelfuse)
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Brightking (Junyao Electronics)
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Leiditech (Lei Mao Electronics)
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YFW (You Feng Wei)
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VRMW(V) 30 BreakdownVoltage(MAX) 36.80 Test\nCurrent(mA) 1 IR@VRWM(uA) 48.4 Vc@IPP(V) 31 IPP(A) 1
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prosemi (prosemi)
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GOODWORK (Good Work)
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Littelfuse (American Littelfuse)
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Littelfuse (American Littelfuse)
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MSKSEMI (Mesenco)
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Peak reverse working voltage (1) VRWM: 4.5V VC IPP=130A tP = 8/20μs VC14V Junction capacitance Cj: 320PF to 360PF Peak pulse power PPP: 2000W
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