Triode/MOS tube/transistor/module

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 15nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 600mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 110@2mA, 5V Characteristic frequency (fT): 300MHz Operating temperature: +150℃@(Tj)

N-channel, 150V, 43A, 42mΩ@10V

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 115mA Power (Pd): 225mW On-Resistance (RDS(on)@Vgs,Id): 7.5Ω@10V, 500mA Threshold Voltage (Vgs(th)@Id): 2.5V@250μA

Double triode, Vceo=50V, Ic=150mA, hfe=120~560