Triode/MOS tube/transistor/module

This N-channel MOSFET is produced using the advanced PowerTrench process. Combining advances in silicon and Dual Cool encapsulation technology, it provides the lowest rDS(on) while maintaining excellent switching performance with very low junction-to-ambient thermal resistance.

Type: P-channel Drain-source voltage (Vdss): 55V Continuous drain current (Id): 31A Power (Pd): 3.8W On-resistance (RDS(on)@Vgs,Id): 60mΩ@10V,16A

P-channel, -20V, -5.6A, 50mΩ@-4.5V

N-channel, 20V, 16A, 6mΩ@4.5V

N+P channel, 30V, 11A, 10mΩ@10V

2SD1616A; NPN; 120V; 1A; 0.75W; frequency 160MHZ

This N-Channel MV MOSFET is produced using ON Semiconductor's advanced PowerTrench process which incorporates Shielded Gate technology. This process has been optimized to minimize on-resistance while maintaining excellent switching performance with the industry's best soft body diode.