Triode/MOS tube/transistor/module
ORIENTAL SEMI (Dongwei)
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SINO-IC (Coslight Core)
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Littelfuse (American Littelfuse)
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LONTEN (Longteng Semiconductor)
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LRC (Leshan Radio)
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PNP Vceo=-50V Ic=-100mA, hfe=200~475 (Ic=-2mA, Vce=-5V)
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Infineon (Infineon)
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N-channel, 30V, 14A, 8.7mΩ@10V
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This is a 20 V P-channel power MOSFET.
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NPN, Vceo=30V, Ic=1.5A, hfe=160~320
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The MJE/MJF18004G features an application-specific advanced die for switch-mode power supplies and electronic lamp ballasts operating on 220 V line.
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N-Channel, PowerTrench MOSFET, 150V, 29A, 54mΩ
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BLUE ROCKET (blue arrow)
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N-Channel PowerTrench MOSFET 100V, 80A, 9m?
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CRMICRO (China Resources Micro)
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MSKSEMI (Mesenco)
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Field effect configuration: P-channel VDSS withstand voltage -20V, ID current -1.5A, RDS(ON) on-resistance 90mR@VGS -4.5V(MAX), VGS(th) turn-on voltage -0.3V to -1V
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TWGMC (Taiwan Dijia)
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Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 25V Collector Current (Ic): 500mA Power (Pd): 300mW
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