Triode/MOS tube/transistor/module

Field effect transistor (MOSFET) N-channel, VDSS withstand voltage 50V, ID current 220mA, RDON on-resistance 2R@VGS 10V(MAX), VGS(th) turn-on voltage 0.8-1.5V

Low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.

ransistors,NPN 40V 500mA 300mW HFE=200～350 ,SOT-23

650V 11A 360mΩ@10V

41A, 800V, triac.

41A, 800V, triac.