Triode/MOS tube/transistor/module

One-way micro-trigger thyristor On-state average current IT(AV): 2A, off-state repetitive peak voltage VDRM/VRRM: 600V, gate trigger current Igt: 10~200uA

VCES(V) 1200 IC(A)@158℃ 40 VCE(sat)(V) 1.8 E(off)(mj) 1.2 Vf(V) 3.5

PNP, Vceo=-500V, Ic=-0.15A

Drain-source voltage (Vdss): ±60V Continuous drain current (Id): ±4.4A Power (Pd): 2W On-resistance (RDS(on)@Vgs,Id): 37mΩ@10V,5.3A

N-channel drain-source voltage (Vdss): 500V Continuous drain current (Id): 8A Power (Pd): 3.1W On-resistance (RDS(on)@Vgs,Id): 850mΩ@10V, 4.8A Threshold voltage ( Vgs(th)@Id): 4V@250uA N-channel, 500V, 8A, 850mΩ@10V