Triode/MOS tube/transistor/module

Configuration Single Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 45 VGS(th)(v) 1.6 RDS(ON)(m?)@4.158V 10 Qg(nC)@4.5V - QgS(nC) 7 Qgd(nC) 8 Ciss(pF) 2450 Coss(pF) 185 Crss(pF) 170

N-channel, 500V, 5A, 1.4Ω@10V

SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, the SUPERFET III MOSFET Easy drive family helps manage EMI issues for easier design implementation.

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MOS, TO-252, P-channel, -40V, -63A, 11mΩ (Max), 75W