Triode/MOS tube/transistor/module

MOSFET Type N Drain-Source Voltage (Vdss) (V) 18 Threshold Voltage VGS ±10 Vth(V) 0.3-1.1 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 12

N+P channel, N: VDSS withstand voltage 30V, ID current 16A, RDON on-resistance 20mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.0-2.5 V, P: VDSS withstand voltage 30V, ID current 14A , RDON on-resistance 30mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.0-2.5V,

Collector-base reverse breakdown voltage-160V, collector-emitter reverse breakdown voltage-150V, collector current IC-600mA