Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
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DELTAMOS (Dunwei)
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TI (Texas Instruments)
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CSD17305Q5A 30V, N-Channel NexFET MOSFET™, Single SON5x6, 3.6mΩ
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GOFORD (valley peak)
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APM (Jonway Microelectronics)
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Hottech (Heketai)
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AGM-Semi (core control source)
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MSKSEMI (Mesenco)
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Triode Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 25V Collector Current (Ic): 1.5A Power (Pd): 500mW DC Current Gain (hFE@Ic,Vce): 200@100mA, 1V 200-350 NPN,Vceo=25V,Ic=1.5A
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N-channel, 30V, 35A, 8mΩ@4.5V
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GOFORD (valley peak)
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This is a -60 V, P-channel MOSFET in a SOT-223 encapsulation. The device is very rugged and has a large safe operating area.
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NPN,Vceo=40V,Ic=200mA
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