Triode/MOS tube/transistor/module

PNP

This N-channel MOSFET is produced using the advanced PowerTrench process. Combining developments in both silicon and Dual Cool encapsulation technology, it offers the lowest rDS(on) due to extremely low junction-to-ambient thermal resistance while maintaining excellent switching performance.

The combination of low saturation voltage and high gain makes this bipolar power transistor ideal for power-saving high-speed switching applications.

Semiconductor transistor field effect transistor MOS tube, DFN-8 5*6, N channel, withstand voltage: 40V, current: 110A, 10V internal resistance (Max): 0.0028Ω, 4.5V internal resistance (Max): 0.0048Ω, power : 75W