Triode/MOS tube/transistor/module

Field Effect Transistor (MOSFET) Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 300mA Power (Pd): 350mW On-Resistance (RDS(on)@Vgs,Id): 2Ω@ 10V,0.3A

P-channel, 20V, 2A

This bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. MJD31, MJD31C (NPN) and MJD32, MJD32C (PNP) are complementary devices.

BC846BS-F2-0000HF

NPN, 40V, 600mA

N-channel, 40V, 130A, 2.3mΩ@10V

P-channel, -40V, -10.5A, 15mΩ@-10V