Triode/MOS tube/transistor/module

NPN digital transistor 47k/47k

2 PNP, -50V, -100mA

NPN, Vceo=50V, Ic=100mA

N-channel, 60V, 300mA, 3Ω@10V

This PNP bipolar transistor is suitable for high gain, low noise general purpose amplifier applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

The ISL9V5036P3_F085 is a next generation IGBT that provides excellent SCIS capability within a TO-220 plastic encapsulation. This device is suitable for use in automotive ignition circuits, especially as a coil driver. Internal diodes provide voltage clamping without external components.

N-channel 900V 6A