Triode/MOS tube/transistor/module

IC(A) 0.6 VCEO(V) 40 hFE(β) 40-300 fT(MHZ) 250 VCBO(V) 60 VCE(sat)(W) 0.4 Type NPN

PNP, Vceo=-80V, Ic=-1A

Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 110A Power (Pd): 70W On-Resistance (RDS(on)@Vgs,Id): 2.7mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 2.5V@250uA Gate charge (Qg@Vgs): 27nC@10V, operating temperature: -55℃~+150℃@(Tj) General materials (low voltage MOSFET power supply, energy storage power supply etc.), Vds=30V Id=110A Rds=2.8mΩ (3.6mΩ max)? DFN5x6encapsulation;