Triode/MOS tube/transistor/module

N tube, 100V, 6A, open 2.0V, 195mΩ@10V

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Type P Drain-Source Voltage (Vdss) -30 Threshold Voltage (Vgs) 25 Continuous Drain Current (Id) On-Resistance (mΩ) 10.5 Input Capacitance (Ciss) 2590 Reverse Transfer Capacitance Crss (pF) 360 Gate Charge (Qg ) 65

N-channel NexFET power MOSFET. 8-VSON-CLIP-55 to 150

N-channel, 100V, 104A

P-channel, -60V, -50A, 20mΩ@-10V

Pre-biased NPN+PNP 65V 100mA

N-channel, 60V, 55A, 16.5mΩ@10V

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 50V Collector Current (Ic): 150mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 300mV@100mA, 10mA Characteristic frequency (fT): 80MHz Operating temperature: +150℃@(Tj)

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.

The CNY17XM, CNY17FXM, and MOC810XM devices consist of a Gallium Arsenide infrared light-emitting diode coupled to an NPN phototransistor with dual-row plug-inencapsulation.

Configuration N+P Type P-Ch VDS(V) -40 VGS(V) 20 ID(A)Max. -22 VGS(th)(v) -2 RDS(ON)(m?)@4.254V 46 Qg( nC)@4.5V 9 QgS(nC) 2.54 Qgd(nC) 3.1 Ciss(pF) 1004 Coss(pF) 108 Crss(pF) 80