Triode/MOS tube/transistor/module

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 60A Power (Pd): 62.5W On-Resistance (RDS(on)@Vgs,Id): 6.5mΩ@10V,30A Threshold Voltage (Vgs(th)@Id): 1.7V@250uA Gate Charge (Qg@Vgs): 52.1nC@10V Input Capacitance (Ciss@Vds): 2.1nF@30V , Vds=60V Id=60A Rds=6.5mΩ ,Working temperature: -55℃~+150℃@(Tj) DFN5*6encapsulation;

P-channel, -20V, -3A, 80mΩ@-4.5V

Dual P-channel, -20V, -0.45A, 0.756Ω@-4.5V

P-channel, -12V, -6A, 28mΩ@-4.5V

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 400V Collector Current (Ic): 12A Power (Pd): 100W Collector Cutoff Current (Icbo): 1mA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 3V@12A, 3A DC current gain (hFE@Ic,Vce): 6@8A, 5V Characteristic frequency (fT): 4MHz Operating temperature: +150℃@(Tj) High voltage fast switching NPN power crystal

N-channel, 100V, 80A, 9mΩ@10V

N-channel, 60V, 0.115A, 7.5Ω@10V