Triode/MOS tube/transistor/module

P-channel, -30V, -4.9A, 53mΩ@-10V

N-channel, 800V, 11A, 450mΩ@10V

MOS, SOT-23, N-channel, 100V, 3.5A, 88mΩ (Max), 1.2W

200A 80V

Configuration Dual Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -6.5 VGS(th)(v) - RDS(ON)(m?)@4.320V 53 Qg(nC)@ 4.5V 6.2 QgS(nC) 2.5 Qgd(nC) 3.3 Ciss(pF) 640 Coss(pF) 270 Crss(pF) 103

N-channel, 60V

PNP, 30V, 0.1A, SOT23

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For UPS, photovoltaic inverter, welding machine VCE=1200V Ic=40A Ptot=278W high switching frequency to replace Silan ST Magnachip infineon 40N120 40A 1200V half-current IGBT; fully compatible with BT40T120CKF C2764975