Triode/MOS tube/transistor/module

The device employs a dual encapsulation consisting of two purpose-built N-channel MOSFETs. The switching nodes are already connected internally to allow easy placement and routing of the synchronous buck converter. The control MOSFET (Q1) and synchronization SyncFET (Q2) provide the best power efficiency.

N-channel, 60V, 200A, 1.8mΩ

P groove -20V -4.2A

N-channel, 60V, 1A, 1Ω@10V

2SA2040 is a bipolar transistor, -50V -8A, low saturation voltage, (PNP)NPN single TP/TP-FA, for high current switching applications.

N-channel, Vce=650V, Ic=100A

Field Effect Transistor (MOSFET) Type: One N-channel and one P-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 10A/-8A Power (Pd): 3.6W On-resistance (RDS(on )@Vgs,Id): 12mΩ@10V, 15A; 17mΩ@-10V,-20A Threshold Voltage (Vgs(th)@Id): 1.6V/-1.7V@250uA Gate Charge (Qg@Vgs): 16nC@ 10V; 45nC@-10V Input capacitance (Ciss@Vds): 0.85nF@15V; 1.38nF@-15V , Vds=30V Id=10A/-8A Rds=12mΩ, working temperature: -55℃~+150℃@( Tj)