Triode/MOS tube/transistor/module

NPN

NPN, 65V, 100mA

N-channel, 100V, 63A, 16mΩ@4.5V

Type: P-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 52A Power (Pd): 50W On-Resistance (RDS(on)@Vgs,Id): 18mΩ@10V,15A Threshold Voltage ( Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 70nC@10V Input capacitance (Ciss@Vds): 4.55nF@30V, Vds=60V Id=52A Rds=18mΩ, operating temperature: -55℃~+150℃@(Tj);

P channel

This P-channel MOSFET is specifically designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching pulse width modulation (PWM) controllers and battery chargers. than others with comparable R

P-channel, -20V, -7.7A, 40mΩ@-10V

PNP, Vceo=-50V, Ic=-100mA

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.