Triode/MOS tube/transistor/module

NPN, Vceo=60V, Ic=1A, hfe=200~400

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Semiconductor transistor field effect transistor MOS tube, TO-252-4L, N+P channel, withstand voltage: 30V/-30V, current: 16A/-16A, 10V internal resistance (Max): 0.02Ω/0.02Ω, 4.5V Internal resistance (Max): 0.04Ω/0.025Ω, power: 25W

N-channel, 20V, 1.9A, 120mΩ@4.5V

Voltage VDSS700V, conduction resistance Rds2.8 ohms, charge Qg20nC, current ID4A

Type: N-Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 4.2A Power (Pd): 1.4W On-Resistance (RDS(on)@Vgs,Id): 50mΩ@4.5V,4.2 A Threshold voltage (Vgs(th)@Id): 1.4V@250uA Operating temperature: -55 to+150℃@(Tj)

Drain-source voltage (Vdss): -30V Continuous drain current (Id): -50A Power (Pd): 52W On-resistance (RDS(on)@Vgs,Id): 6mΩ@10V,15A