Triode/MOS tube/transistor/module

N-channel, 900V, 9A

Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 4.2 VGS(th)(v) 1.5 RDS(ON)(m?)@4.106V 85 Qg(nC)@4.5V - QgS(nC) 2.5 Qgd(nC) 3 Ciss(pF) 740 Coss(pF) 45 Crss(pF) 24

N-channel, 650V, 25A, 0.127Ω@10V

diode

40V, 200mA, NPN transistor

600V, 30A, IGBT

P-channel, -30V, -5.8A, 33mΩ@10V