Triode/MOS tube/transistor/module

N-channel, 30V, 6.9A, 27mΩ@10V

Transistor Type: NPN Collector Emitter Breakdown Voltage (Vceo): 300V Collector Current (Ic): 300mA Power (Pd): 350mW Collector Cutoff Current (Icbo): 250nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 200mV@20mA HFE: 100-200

NPN 15V 0.2A

N-channel, 55V, 75A, 6.5mΩ@10V

N-channel, 20V, 6.5A, 22mΩ@4.5V

N-channel, 100V, 1.2A, 600mΩ@10V