Triode/MOS tube/transistor/module
ST (STMicroelectronics)
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ST (STMicroelectronics)
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DIODES (US and Taiwan)
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N-channel, 100V, 0.1A, 10Ω@10V
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N-Channel, PowerTrench MOSFET, 150V, 37A, 36mΩ, this latest shielded gate PowerTrench MOSFET has smaller QSYNC, excellent soft reverse recovery intrinsic body diode performance, fast switching speed, which can greatly improve the energy efficiency of synchronous rectification .
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DIODES (US and Taiwan)
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Dual PNP, Vceo=-45V, Ic=-100mA
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N-channel, 30V, 3.8A, 55mΩ@10V
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Convert Semiconductor
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XINGUAN (core crown)
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Gallium Nitride GaN 650V Power Transistor(FET)
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XINGUAN (core crown)
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Gallium Nitride GaN 650V Power Transistor(FET)
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DIODES (US and Taiwan)
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ST (STMicroelectronics)
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N-channel, 30V, 30A, 0.0032Ω@10V
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BLUE ROCKET (blue arrow)
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SINO-IC (Coslight Core)
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