Triode/MOS tube/transistor/module

800V 25A

PNP, Vceo=60V, Ic=600mA

P-channel, 30V, 5.3A

NPN, Vceo=25V, Ic=0.5A, hfe=160~300

Voltage VDSS500V, conduction resistance Rds0.72 ohms, charge Qg35nC, current ID9A

NPN, 80V, 500mA

This N-channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for use in switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

P-channel, 100V, 680mA, 1.8Ω@10V