Triode/MOS tube/transistor/module

N-channel, 500V, 18A, 0.32Ω

N channel + P channel

MOSFET, N-channel 20V/10V 4A VGS(th)=0.9V 30mΩ@3A&4.5V, SOT-23

This P-channel MOSFET is produced using an advanced PowerTrench process optimized to minimize on-resistance while maintaining excellent switching performance.

This 8 A 100 V NPN Darlington bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. 2N6040, 2N6042 (PNP); and 2N6043, 2N6045 (NPN) are complementary devices.

PNP

N-channel, 60V, 7A, 24mΩ@10V