Triode/MOS tube/transistor/module

Configuration Single Type P-Ch VDS(V) -60 VGS(V) 25 ID(A)Max. -45 VGS(th)(v) -2.2 RDS(ON)(m?)@4.513V 42 Qg(nC) @4.5V 24 QgS(nC) 5.3 Qgd(nC) 6.4 Ciss(pF) 1350 Coss(pF) 180 Crss(pF) 85

This N-channel MOSFET uses Fairchild's advanced Power Trench

P channel, -30V -12A

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 50V Collector Current (Ic): 150mA Power (Pd): 200mW

P-channel, 100V, 17A

N-channel, 200V, 40m²@10V, 50A

P-channel, -20V, -4.1A