Triode/MOS tube/transistor/module

N-channel, 60V, 2.7A, 92mΩ@10V

N-channel, 30V, 160A, 3.9mΩ@4.5V

Type N VDS(V) 20V VGS(V) ±12V Vth(V) 0.7V RDS(ON)(mΩ) 13mΩ ID(A) 10A

Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 2 VGS(th)(v) 1.5 RDS(ON)(m?)@4.33V 250 Qg(nC)@4.5V - QgS(nC) 1.6 Qgd(nC) 1.7 Ciss(pF) 508 Coss(pF) 29 Crss(pF) 16.4

ON Semiconductor's e2PowerEdge series of low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control. Typical applications are DC-DC converters and power management in portable and battery-operated products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor control in mass storage products such as disk drives and tape drives. In the automotive industry, they are used in airbag deployment and various instrument panels. The high current gain allows the e2PowerEdge device to be driven directly from the control output of a PMU, while the linear gain (Beta) makes it an ideal component for an analog amplifier.

N-channel, 200V, 20A, 180mΩ@10V

This NPN bipolar transistor is suitable for general purpose VHF/UHF applications and features a SOT-23 surface mount encapsulation. This device is suitable for low power surface mount applications.