Triode/MOS tube/transistor/module
This N-channel MOSFET is produced using the advanced PowerTrench process. Combining developments in both silicon and Dual Cool encapsulation technology, it offers the lowest rDS(on) due to extremely low junction-to-ambient thermal resistance while maintaining excellent switching performance.
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Automotive Power MOSFETs for compact and efficient designs with 5x6mm LFPAK encapsulation and high thermal performance. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications that require higher board-level reliability.
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Automotive power MOSFETs for low power applications. The RDS(on) of these small 20V, 300mA, 1Ω surface mount MOSFETs ensures minimal power loss and energy savings, making them suitable for small power management circuits.
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This P-channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process, which has been targeted at r
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RENESAS (Renesas)/IDT
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RENESAS (Renesas)/IDT
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RENESAS (Renesas)/IDT
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RENESAS (Renesas)/IDT
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RENESAS (Renesas)/IDT
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Sinopower (large and medium)
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ST (STMicroelectronics)
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TOSHIBA (Toshiba)
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