Triode/MOS tube/transistor/module
This N-channel MOSFET is designed to increase the overall energy efficiency of DC/DC converters and can be used with synchronous switching PWM controllers or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON) and fast switching.
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N-channel, 30V, 100A, 2mΩ@10V
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MICRONE (Nanjing Weimeng)
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N-channel, 20V, 5.2A, 37mΩ@10V
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NCE (Wuxi New Clean Energy)
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Samwin (Semipower)
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N-channel, 60V, 40A, 0.0092Ω@10V
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ElecSuper (Jingxin Micro)
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HXY MOSFET (Huaxuanyang Electronics)
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Type: N-channel Drain-source voltage (Vdss): 100V Continuous drain current (Id): 5A Power (Pd): 3.1W On-resistance (RDS(on)@Vgs,Id): 125mΩ@10V,4A
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SPTECH (Shenzhen Quality Super)
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SPTECH (Shenzhen Quality Super)
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MSKSEMI (Mesenco)
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Type: P-Channel Drain-Source Voltage (Vdss): -30V Continuous Drain Current (Id): -3A Power (Pd): 1.56W On-Resistance (RDS(on)@Vgs,Id): 60mΩ@-10V, -3A Threshold Voltage (Vgs(th)@Id): -1.0 to -2.5V@250uA
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